6-220 description hewlett-packards mga-86563 is an economical, easy-to-use gaas mmic amplifier that offers low noise figure and excellent gain for applications from 0.5 to 6 ghz. packaged in an ultra-miniature sot-363 package, it requires half the board space of the sot-143. the mga-86563 may be used without impedance matching as a high performance 2 db nf gain block. alternatively, with the addition of a simple shunt-series inductor at the input, the device noise figure can be reduced to 1.6 db at 2.4 ghz. for 1.5 ghz applications and above, the output is well matched to 50 w . below 1.5 ghz, gain can be increased by using conjugate matching. the circuit uses state-of-the-art phemt technology with self- biasing current sources, a source- follower interstage, resistive feedback, and on-chip impedance matching networks. a patented, on-chip active bias circuit allows operation from a single +5 v power supply. current consump- tion is only 14 ma, making this part suitable for battery powered applications. 0.5 C 6 ghz low noise gaas mmic amplifier technical data mga-86563 features ? ultra-miniature package ? internally biased, single +5 v supply (14 ma) ? 1.6 db noise figure at 2.4 ghz ? 21.8 db gain at 2.4 ghz ? +3.1 dbm p 1db at 2.4 ghz applications ? lna or gain stage for ism, pcs, mmds, gps, tvro, and other c band applications surface mount package sot-363 (sc-70) pin connections and package marking equivalent circuit note: package marking provides orientation and identification. output and v d gnd 86 gnd gnd input gnd 16 25 34 rf input rf output and v d ground 2, 3, 5, 6 4 1 5965-9686e
6-221 thermal resistance [2] : q ch-c = 160 c/w notes: 1. operation of this device above any one of these limits may cause permanent damage. 2. t c = 25 c (t c is defined to be the temperature at the package pins where contact is made to the circuit board). mga-86563 absolute maximum ratings absolute symbol parameter units maximum [1] v d device voltage, rf v 9 output to ground v in rf input voltage to v +0.5 ground C1.0 p in cw rf input power dbm +13 t ch channel temperature c 150 t stg storage temperature c -65 to 150 electrical specifications, t c = 25 c, z o = 50 w unless noted, v d = 5 v symbol parameters and test conditions units min. typ. max. g test gain in test circuit [1] f = 2.0 ghz 17 20 nf test noise figure in test circuit [1] f = 2.0 ghz 1.8 2.3 nf o optimum noise figure f = 0.9 ghz db 2.0 (tuned for lowest noise figure) f = 2.0 ghz 1.5 f = 2.4 ghz 1.6 f = 4.0 ghz 1.7 f = 6.0 ghz 2.0 g a associated gain at nf o f = 0.9 ghz db 20.8 (tuned for lowest noise figure) f = 2.0 ghz 22.7 f = 2.4 ghz 22.5 f = 4.0 ghz 18.0 f = 6.0 ghz 13.7 p 1 db output power at 1 db gain compression f = 0.9 ghz dbm 3.6 (50 w performance) f = 2.0 ghz 4.1 f = 2.4 ghz 4.2 f = 4.0 ghz 4.3 f = 6.0 ghz 3.3 ip 3 third order intercept point f = 2.4 ghz dbm +15 vswr in input vswr f = 2.4 ghz 2.3:1 vswr out output vswr f = 2.4 ghz 1.7:1 i d device current ma 14 note: 1. guaranteed specifications are 100% tested in the circuit in figure 10 in the applications information section.
6-222 mga-86563 typical performance, t c = 25 c, v d = 5 v figure 7. input and output vswr (into 50 w ) vs. frequency. figure 8. 50 w noise figure and associated gain vs. frequency. figure 9. device current vs. voltage. figure 1. minimum noise figure (optimum tuning) vs. frequency and temperature. figure 2. associated gain (optimum tuning) vs. frequency and temperature. figure 4. minimum noise figure (optimum tuning) vs. frequency and voltage. figure 3. output power for 1 db gain compression (into 50 w ) vs. frequency and temperature. figure 5. associated gain (optimum tuning) vs. frequency and voltage. figure 6. output power for 1 db gain compression (into 50 w ) vs. frequency and voltage. associated gain (db) 0 0 frequency (ghz) 2 30 5 6 15 3 1 +25 +85 10 -40 45 20 25 p 1 db (dbm) 0 0 frequency (ghz) 10 4 2 6 8 4 123 5 +25 -40 6 +50 +85 noise figure (db) 0 0 frequency (ghz) 3 5 2 1 6 4 5 12 4 4.5 v 5.0 v 5.5 v 3 associated gain (db) 0 0 frequency (ghz) 2 30 5 6 15 3 1 5.0 v 4.5 v 10 5.5 v 45 20 25 p 1 db (dbm) 0 0 frequency (ghz) 10 4 2 6 8 4 123 5 7.0 v 6 5.5 v 5.0 v 4.5 v vswr (n:1) 0 1.0 frequency (ghz) 2 4.0 1.5 6 2.5 3 1 2.0 45 3.0 3.5 input output noise figure (db) 0 0 frequency (ghz) 4 4.0 0.5 12 1.5 6 2 1.0 810 2.0 2.5 nf 50 0 32 8 16 associated gain (db) 24 3.0 3.5 nfopt g a 50 current (ma) 0 0 voltage (v) 3 16 2 7 6 4 1 4 56 8 10 -40 12 14 2 +25 +50 +85 noise figure (db) 0 0 frequency (ghz) 2 5 2 1 6 4 3 1 +85 3 -40 45 +25
6-223 mga-86563 typical scattering parameters [1] , t c = 25 c, z o = 50 w , v d = 5 v freq. s 11 s 21 s 12 s 22 k ghz mag. ang. db mag. ang. db mag. ang. mag. ang. factor 0.1 0.84 -17 3.1 1.42 76 -39.8 0.010 15 0.85 -15 3.27 0.5 0.57 -29 14.7 5.41 41 -44.3 0.006 -23 0.59 -39 6.77 1.0 0.55 -41 18.9 8.77 4 -51.2 0.003 -2 0.46 -53 10.49 1.5 0.53 -57 20.8 10.97 -29 -52.1 0.002 70 0.38 -66 14.23 2.0 0.47 -73 21.7 12.14 -62 -45.2 0.005 96 0.32 -78 5.94 2.5 0.38 -89 21.8 12.33 -94 -40.7 0.009 102 0.24 -89 3.78 3.0 0.26 -104 21.3 11.61 -125 -37.4 0.014 100 0.16 -99 2.92 3.5 0.14 -115 20.2 10.23 -152 -34.4 0.018 97 0.09 -102 2.75 4.0 0.04 -106 18.8 8.75 -177 -32.6 0.023 92 0.03 -82 2.58 4.5 0.04 -6 17.4 7.44 162 -30.9 0.027 88 0.03 1 2.58 5.0 0.07 2 16.1 6.41 143 -29.6 0.032 83 0.05 20 2.53 5.5 0.09 -4 14.9 5.57 126 -28.1 0.038 78 0.06 19 2.45 6.0 0.11 -17 13.9 4.93 110 -26.0 0.044 72 0.08 14 2.38 6.5 0.12 -28 12.9 4.40 94 -24.9 0.050 65 0.08 4 2.35 7.0 0.13 -36 12.0 3.96 79 -23.8 0.057 59 0.09 -3 2.29 7.5 0.15 -44 11.1 3.58 65 -22.6 0.065 53 0.11 -12 2.21 8.0 0.17 -53 10.4 3.30 51 -22.6 0.074 44 0.13 -21 2.10 mga-86563 typical noise parameters [1] , t c = 25 c, z o = 50 w , v d = 5 v frequency nf o (ghz) (db) mag. ang. r n /50 w 5 2.8 0.61 4 1.16 1.0 1.8 0.56 24 0.47 1.5 1.5 0.50 33 0.34 2.0 1.5 0.45 40 0.38 2.5 1.6 0.41 50 0.33 3.0 1.6 0.38 57 0.30 4.0 1.7 0.32 73 0.28 5.0 1.9 0.24 98 0.27 6.0 2.1 0.15 131 0.24 note: 1. reference plane per figure 11 in applications information section. g opt
6-224 mga-86563 applications information introduction the mga-86563 is a high gain, low noise rf amplifier for use in wireless rf applications within the 0.5 to 6 ghz frequency range. the mga-86563 is a three-stage, gaas microwave monolithic integrated circuit (mmic) ampli- fier that uses internal feedback to provide wideband gain and impedance matching. a patented, active bias circuit makes use of current sources to re-use the drain current in all three stages of gain, thus minimiz- ing the required supply current and decreasing sensitivity to variations in power supply voltage. test circuit the circuit shown in figure 10 is used for 100% rf testing of noise figure and gain. the input of this circuit is fixed tuned for a conju- gate power match (maximum power transfer, or, minimum input vswr) at 2 ghz. tests in this circuit are used to guarantee the nf test and g test parameters shown in the electrical specifica- tions table. the 3.3 nh inductor, l1 (coilcraft, cary, il or equivalent) in series with the input of the amplifier matches the input to 50 w at 2 ghz. the parameter test circuit uses a high impedance rf choke to apply v d to the mmic while isolating the power supply from the rf output of the amplifier. phase reference planes the positions of the reference planes used to measure s- parameters and to specify g opt for the noise parameters are shown in figure 11. as seen in the illustration, the reference planes are located at the extremities of the package leads. biasing the mga-86563 is a voltage- biased device and operates from a single +5 volt power supply. with a typical current drain of since dc bias is applied to the mga-86563 through the rf output pin, some method of isolating the rf from the dc must be provided. an rf choke or length of high impedance transmission line is typically used for this purpose. sot-363 pcb layout a pcb pad layout for the minia- ture sot-363 (sc-70) package used by the mga-86563 is shown in figure 12 (dimensions are in inches). this layout provides ample allowance for package placement by automated assembly equipment without adding parasitics that could impair the high frequency rf performance of the mga-86563. the layout is shown with a nominal sot-363 package footprint superimposed on the pcb pads. only 14 ma, the mga-86563 is suitable for use in battery powered applications. rf performance is very stable over a wide variation of power supply voltage. reference planes test circuit figure 11. reference planes. v d c1 l1 3.3 nh w = 110 (50 w ) rf input rf output w = 110 (50 w ) w = 110 i = 110 rfc (28 nh) board material = 1/16" fr-4 w = 15 i = 1000 figure 10. test circuit for 2 ghz. 0.026 0.075 0.016 0.035 figure 12. pcb pad layout (dimensions in inches).
6-225 figure 14. typical amplifier circuit. v d c3 l1 50 w 50 w high z 50 w c1 c2 50 w r1 rf layout the rf layout in figure 13 is suggested as a starting point for amplifier designs using the mga- 86563 mmic. adequate grounding is needed to obtain maximum performance and to obviate potential instability. all four ground pins of the mmic should be connected to rf ground by using plated through holes (vias) near the package terminals. it is recommended that the pcb pads for the ground pins not be connected together underneath the body of the package. pcb traces hidden under the package cannot be adequately inspected for smt solder quality. pcb material fr-4 or g-10 printed circuit board material is a good choice for most low cost wireless applications. typical board thickness is 0.020 or 0.031 inches. the width of 50 w microstriplines in pc boards of these thicknesses is also convenient for mounting chip components such as the series inductor that is used at the input for impedance matching or for dc blocking capacitors. for applications requiring the lowest noise figures, the use of ptfe/glass dielectric materials may be warranted to minimize transmission line losses at the amplifier input. a 0.5 inch length of 50 w microstripline on fr-4 has approximately 0.3 db loss at 4 ghz which will add directly to the noise figure of the mga-86563. typical application circuit a typical implementation of the mga-86563 as a low noise ampli- fier is shown in figure 14. a 50 w microstripline with a series dc blocking capacitor, c1, is used to feed rf to the mmic. the input of the mga-86563 is already partially matched for noise figure and gain to 50 w . the use of a simple input matching circuit, such as a series inductor, will minimize amplifier noise figure. since the impedance match for nf o (minimum noise figure) is very close to a conjugate power match, a low noise figure can be realized simultaneously with a low input vswr. dc power is applied to the mmic through the same pin that is shared with the rf output. a 50 w microstripline is used to connect the device to the following stage. a bias decoupling network is used to feed in v d while simultan- eously providing a dc block to the rf signal. the bias decoupling network shown in figure 14, consisting of resistor r1, a short length of high impedance microstripline, and bypass capacitor c3, will provide excellent performance over a wide frequency range. surface mount chip inductors could be used in place of the high impedance transmission line to act as an rf choke. consideration should be given to potential resonances and signal radiation when using lumped inductors. for operation at frequencies below approximately 2 ghz, the addition of a simple impedance matching circuit to the output will increase the gain and output power by 0.5 to 1.5 db. the output matching circuit will not effect the noise figure. a small value resistor placed in series with the v dd line may be useful to de-q the bias circuit. typical values of r1 are in the 10 w to 100 w range. depending on the value of resistance used, the supply voltage may have to be increased to compensate for volt- age drop across r1. the power supply should be capacitively bypassed (c3) to ground to prevent undesirable gain varia- tions and to eliminate unwanted feedback through the bias lines that could cause oscillation. rf output and v d rf input 50 w 50 w 86 figure 13. rf layout.
6-226 higher bias voltages while the mga-86563 is designed primarily for use in +5 volt applications, the internal bias regulation circuitry allows it to be operated with any power supply voltage from +5 to +7 volts. the use of +7 volts increases the p 1db by approximately 1 dbm. the effect on noise figure, gain, and vswr with higher v d is negligible. for more information call your nearest hp sales office. mga-86563 part number ordering information part number devices per container container mga-86563-tr1 3000 7" reel MGA-86563-BLK 100 antistatic bag package dimensions outline 63 (sot-363/sc-70) 2.20 (0.087) 2.00 (0.079) 1.35 (0.053) 1.15 (0.045) 1.30 (0.051) ref. 0.650 bsc (0.025) 2.20 (0.087) 1.80 (0.071) 0.10 (0.004) 0.00 (0.00) 0.25 (0.010) 0.15 (0.006) 1.00 (0.039) 0.80 (0.031) 0.20 (0.008) 0.10 (0.004) 0.30 (0.012) 0.10 (0.004) 0.30 ref. 10 0.425 (0.017) typ. dimensions are in millimeters (inches)
6-227 tape dimensions and product orientation for outline 63 device orientation user feed direction cover tape carrier tape reel end view 8 mm 4 mm top view 86 86 86 86 p p 0 p 2 f w c d 1 d e a 0 8 max. t 1 (carrier tape thickness) t t (cover tape thickness) 5 max. b 0 k 0 description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a 0 b 0 k 0 p d 1 2.24 0.10 2.34 0.10 1.22 0.10 4.00 0.10 1.00 + 0.25 0.088 0.004 0.092 0.004 0.048 0.004 0.157 0.004 0.039 + 0.010 cavity diameter pitch position d p 0 e 1.55 0.05 4.00 0.10 1.75 0.10 0.061 0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 1 8.00 0.30 0.255 0.013 0.315 0.012 0.010 0.0005 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 3.50 0.05 2.00 0.05 0.138 0.002 0.079 0.002 distance width tape thickness c t t 5.4 0.10 0.062 0.001 0.205 0.004 0.0025 0.00004 cover tape
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